发明名称 Inline physical shape profiling for predictive temperature correction during baking of wafers in a semiconductor photolithography process
摘要 The post exposure bake cycle in a chemically amplified resist process is more precisely controlled by measuring the distance from multiple locations on the bottom of each processed wafer to a reference plane surface while the wafer is supported on a cool plate. Subsequent to measuring the distance, the wafers are transferred to the hot plate that has a series of controllable heating elements. The set temperature for the heating elements is established in response to the distances measured while the wafer is on the cooling plate. The measurements are taken by utilizing proximity sensors located within the cooling plate.
申请公布号 US7425689(B2) 申请公布日期 2008.09.16
申请号 US20060535900 申请日期 2006.09.27
申请人 TOKYO ELECTRON LIMITED 发明人 KULP JOHN M.
分类号 H05B3/68;C23C16/00 主分类号 H05B3/68
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