发明名称 SEMICONDUCTOR DEVICE
摘要 An object is to suppress resonance phenomenon. A pair of reinforcing members (18) are fixed on a gate drive substrate (7) with spacers (37) interposed therebetween and upright portions (40) of the pair of reinforcing members (1 8) are fastened with screws on a side wall of a cathode flange. A spacer (118) is fixed on the gate drive substrate (7) and a projection (118a) of the spacer (118) is inserted in an engaging member (119) fixed on. the bottom of the cathode fin electrode (5) and thus fixed on the bottom of the cathode fin electrode (5). The pair of upright portions (40) as the first and second supporting points and the projection (118a) as the thir d supporting point stably support the gate drive substrate (7) on the cathode fin electro de (5) without freedom of rotation at the three positions arranged to surround an opening (49).
申请公布号 CA2349059(C) 申请公布日期 2008.09.09
申请号 CA20012349059 申请日期 2001.05.28
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MORISHITA, KAZUHIRO;OOTA, KENJI;TAGUCHI, KAZUNORI
分类号 H01L23/32;H01L29/74;H01L23/48;H01L25/11;H01L29/06;H01L29/744 主分类号 H01L23/32
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