发明名称 |
PROCESS FOR PREPARING NANOSTRUCTURED MATERIALS OF CONTROLLEDSURFACE CHEMISTRY |
摘要 |
<p>A process to prepare stoichiometric-nanostructured materials comprising generating a plasma, forming an "active volume" through introduction of an oxidizing gas into the plasma, before the plasma is expanded into a field-fr ee zone, either (1) in a region in close proximity to a zone of charge carrier generation, or (2) in a region of current conduction between field generatin g elements, including the surface of the field generation elements, and transferring energy from the plasma to a precursor material to form in the "active volume" at least one stoichiometric-nanostructured material and a vapor that may be condensed to form a stoichiometric-nanostructured material . The surface chemistry of the resulting nanostructured materials is substantially enhanced to yield dispersion stable materials with large zeta- potentials.</p> |
申请公布号 |
CA2481563(C) |
申请公布日期 |
2008.09.09 |
申请号 |
CA20032481563 |
申请日期 |
2003.02.28 |
申请人 |
NANOPHASE TECHNOLOGIES CORPORATION |
发明人 |
SARKAS, HARRY W.;PIEPENBRINK, JONATHAN |
分类号 |
B01J19/08;H05H1/24;B01J19/12;C01B13/14;C01F7/02;C01F17/00;C01G19/00;C01G30/00;C23C4/12;C23C8/36;C23C14/00;C23C14/32 |
主分类号 |
B01J19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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