发明名称 Plasma enhanced atomic layer deposition system having reduced contamination
摘要 A plasma enhanced atomic layer deposition (PEALD) system is described, wherein the system comprises a processing space and a high vacuum, ultra-clean transfer space. During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate is exposed to the high vacuum space. Processing gases are introduced sequentially and alternately to the process chamber and the pressures and gas flows within, to and from, and between the process chamber and the high vacuum transfer space are controlled to keep the transfer space ultra-clean.
申请公布号 US7422636(B2) 申请公布日期 2008.09.09
申请号 US20050090939 申请日期 2005.03.25
申请人 TOKYO ELECTRON LIMITED 发明人 ISHIZAKA TADAHIRO
分类号 C23C16/505;C23C16/06;C23C16/509 主分类号 C23C16/505
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