发明名称 |
Nonvolatile memory devices and methods of controlling the wordline voltage of the same |
摘要 |
A nonvolatile memory device includes an array of memory cells arranged in rows and columns, the array of memory cells having wordlines associated therewith. A wordline voltage controller determines the levels of wordline voltages to be supplied to the respective wordlines and a wordline voltage generator generates the wordline voltages at the determined levels. Related methods are also provided.
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申请公布号 |
US7423908(B2) |
申请公布日期 |
2008.09.09 |
申请号 |
US20050285446 |
申请日期 |
2005.11.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM MIN-SU;KIM HYUNG-GON |
分类号 |
G11C16/06;G11C5/14;G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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