发明名称 |
Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels |
摘要 |
The present invention provides a strained Si directly on insulator (SSDOI) substrate having multiple crystallographic orientations and a method of forming thereof. Broadly, but in specific terms, the inventive SSDOI substrate includes a substrate; an insulating layer atop the substrate; and a semiconducting layer positioned atop and in direct contact with the insulating layer, the semiconducting layer comprising a first strained Si region and a second strained Si region; wherein the first strained Si region has a crystallographic orientation different from the second strained Si region and the first strained Si region has a crystallographic orientation the same or different from the second strained Si region. The strained level of the first strained Si region is different from that of the second strained Si region.
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申请公布号 |
US7423303(B2) |
申请公布日期 |
2008.09.09 |
申请号 |
US20070830464 |
申请日期 |
2007.07.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;DORIS BRUCE B.;CHEN HUAJIE;MOONEY PATRICIA M.;BEDELL STEPHEN W. |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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