发明名称 |
Self-aligned non-volatile memory cell |
摘要 |
Disclosed is a self-aligned non-volatile memory cell including a small sidewall spacer electrically coupled and being located next to a main floating gate region. Both the small sidewall spacer and the main floating gate region are formed on a substrate and both form the floating gate of the non-volatile memory cell. Both are isolated electrically from the substrate by an oxide layer which is thinner between the small sidewall spacer and the substrate; and is thicker between the main floating gate region and the substrate. The small sidewall spacer can be made small; therefore, the thin oxide layer area can also be made small to create a small pathway for electrons to tunnel into the floating gate.
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申请公布号 |
USRE40486(E1) |
申请公布日期 |
2008.09.09 |
申请号 |
US20050176883 |
申请日期 |
2005.07.07 |
申请人 |
ATMEL CORPORATION |
发明人 |
LOJEK BOHUMIL;RENNINGER ALAN L. |
分类号 |
H01L21/8247;H01L29/788;H01L21/28;H01L21/336;H01L21/768;H01L27/115;H01L29/423;H01L29/76;H01L29/792;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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