发明名称 Input/output upper and lower byte control device using nonvolatile ferroelectric register
摘要 An input/output byte control device using a nonvolatile ferroelectric register can maintain compatibility with various memories by selectively controlling bytes of input/output data. Since bytes of input/output data are selectively activated, the compatibility can be maintained with SRAM (Static Random Access Memory) having wide bytes and flash memory having fixed input/output bytes. Additionally, programs can be changed in a software system using a nonvolatile ferroelectric register.
申请公布号 US7424559(B2) 申请公布日期 2008.09.09
申请号 US20070806441 申请日期 2007.05.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG HEE BOK
分类号 G06F3/00;G11C11/412;G11C7/10;G11C11/22 主分类号 G06F3/00
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