| 摘要 |
A semiconductor device manufacturing method including forming at least a first conductive film and a first insulting film above a semiconductor substrate, forming a plurality of first resist patterns above the first insulating film periodically at first intervals, patterning at least the first insulting film by use of the first resist patterns to form a plurality of mask patterns, each of the mask patterns including the first insulating film, selectively forming a second resist pattern in a space between the mask patterns in such a manner that the second resist pattern is formed in the space corresponding to a region where a second wiring structure wider than the first wiring structure is to be formed, and patterning the first conductive film by use of the second resist pattern and the mask patterns.
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