A method for forming a strontium-ruthenium oxide layer is provided to reduce surface resistance in the strontium-ruthenium oxide layer by using a magnetron. A target(130), a wafer(120) on a heating plate(110) facing the target, and a magnetron sputtering device including a magnetron(140) arranged in a backside of the target are provided. A strontium-ruthenium oxide layer is formed by using the magnetron sputtering device. The magnetron includes a rotary magnet and a gravity center scale arranged at one side of the rotary magnet. The rotary magnet includes a concave part. One end of the concave part is composed of a heart-shaped curve.
申请公布号
KR20080080852(A)
申请公布日期
2008.09.05
申请号
KR20070021110
申请日期
2007.03.02
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
HEO, JANG EUN;KIM, YOUNG KYU;YOO, DONG CHUL;KIM, IK SOO;IM, DONG HYUN;CHO, SUNG WON