FLASH MEMORY DEVICE AND FLASH MEMORY PROGRAMMING METHOD EQUALIZING WEAR-LEVEL

摘要

A flash memory device capable of equalizing wear-level at bit level and a method for programming a flash memory are provided to prolong lifetime of a memory cell by using a new programming method. A memory device includes a memory cell array, an inversion determination part, a programming part and a data judgment part. The inversion determination part generates a programming page(432,442) by inverting or not inverting a data page(431,441) on the basis of the number of '1' and '0' in the data page. The programming part stores the generated programming page in the memory cell array. The data judgment part reads the programming page stored in the memory cell array, and recovers the data page from the programming page according to the error of the read programming page and then outputs the recovered data page.