| 摘要 |
The invention relates to the fabrication of image sensors on a thinned substrate, and especially to colour image sensors. After the fabrication steps carried out on the front face of a silicon substrate and then the transfer of the front face onto a transfer substrate and the thinning of the silicon, the connection pads are produced via the rear face. A multiplicity of discrete contact holes are opened through the thinned silicon, at the location of a connection pad, the holes baring a first conducting layer (24) formed during the front face steps; aluminium (42) is deposited on the rear face, in contact with the silicon, the aluminium penetrating into the openings and coming into contact with the first layer; the aluminium is etched so as to define the connection pad; and finally a peripheral trench is opened right through the thickness of the silicon layer, this trench completely surrounding the connection pad. |
