STRUCTURE DE MASQUE POUR LITHOGRAPHIE

摘要

The invention relates to a reflection lithography mask comprising, on a substrate (S), a reflector coating (RC) and a stack comprised of an etching barrier layer and an absorbing layer, said stack covering only a part of the reflector coating. The absorbing layer is made solely of dielectric material and constitutes the surface layer of the mask. Advantageously, this dielectric material is HfO2. Said material makes it possible to reduce the thickness of the mask pattern and as a result to decrease the shadow region (Z) during mask exposure. The invention applies to reflection lithography.