| 发明名称 |
METHOD OF MANUFACTURING OXIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing an oxide film includes jetting onto a substrate a high-pressure solution containing an oxygen source and having a pressure of 5 MPa, and forming an oxide film on the substrate using the jetted high-pressure solution.
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| 申请公布号 |
US2008214019(A1) |
申请公布日期 |
2008.09.04 |
| 申请号 |
US20080040106 |
申请日期 |
2008.02.29 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KATSUMATA HIROSHI;SAITO MAKOTO;FUJITA HIROSHI;NISHIMURA ERIKO |
| 分类号 |
H01L21/31;B05D1/02 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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