NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate ( 1 ) over which a semiconductor element is formed, and an n-electrode ( 10 ) as a metal electrode formed over the back surface of the GaN substrate ( 1 ). A connection layer ( 20 ) is formed between the GaN substrate ( 1 ) and the n-electrode ( 10 ), and the connection layer ( 20 ) is composed of a material that is other than nitride semiconductors and that contains silicon.