| 摘要 |
A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from CdZnSe, CdMgZnSe, BeZnTe, or BeMgZnTe alloys, and most typically CdxZn1-xSe where x is between 0.55 and 0.57. Typically the III-V material is selected from InAlAs or AlInGaAs alloys, and most typically InP or InyAl1-yAs where y is between 0.53 and 0.57. The layered construction can form one or more distributed Bragg reflectors (DBR's). In another aspect, the invention provides a layered construction comprising an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater comprising no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the invention provides a laser or a photodetector comprising a layered construction.
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