| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem that in a manufacture of a blue light emitting device, a compound based on nitride gallium (GaN) is processed in epitaxially growing on sapphire substrate via buffer layer, however, crack occurs in device layer because between the substrate and AlGaInN device layer, a large difference in lattice constant exists. <P>SOLUTION: The solution is achieved by manufacturing an N-type compound device layer 16 having some sub-layers 16A, 16B and 16C. N-type dope sub-layer 16A, 16B, and 16C corresponding to desired electrical property or characteristic are arranged, and the thickness of each sub-layer is carefully selected so that a crack of material might be avoided, further, its corresponding thickness is made thin as necessary doping volume increases. <P>COPYRIGHT: (C)2008,JPO&INPIT |
