METHOD FOR GROWING GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal by which the yield of a group III nitride crystal can be improved, and to provide a group III nitride crystal grown by the method for growing a group III nitride crystal. SOLUTION: A growth room 19 is formed by segmenting by a counter face 11a opposing to the surface 6a of a susceptor 6 for holding a substrate 8 and by side faces 11b placed to cover the circumference of the susceptor 6. A source gas is introduced into the growth room 19 through at least one place selected from the group consisting of the counter face 11a, side faces 11b and borders between the counter face and the side faces. While a group III nitride crystal is grown on the substrate 8 by the reaction between a nitrogen-containing gas in the source gas and a halogenated gas of a group III element, the temperature of the counter face 11a and the temperature of the side faces 11b are controlled to be higher than the substrate 8 held on the surface 6a of the susceptor 6. COPYRIGHT: (C)2008,JPO&INPIT