发明名称 |
Methods of Forming a Recess Structure and Methods of Manufacturing a Semiconductor Device Having a Recessed-Gate Structure |
摘要 |
Methods of forming a recess structure having a gentle curvature are provided. Such methods include forming a hard mask on a substrate, forming a first preliminary recess on the substrate using the hard mask as an etching mask and forming a spacer on a sidewall of the first preliminary recess. Methods may include forming a second preliminary recess from the first preliminary recess using the spacer as an etching mask and forming the recess structure having an enlarged lower portion from the second preliminary recess using the spacer as an etching mask.
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申请公布号 |
US2008214009(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
US20080020841 |
申请日期 |
2008.01.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHI-HOON;PARK JONG-CHUL;LEE TAE-WOO;KANG TAE-WOO;YIM JANG-BIN |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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