METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER

摘要

Provided is a method for manufacturing a silicon single crystal wafer. Rapid heat treatment is performed to a silicon single crystal wafer, which is manufactured by Czochralski method and has an entire surface in the diameter direction as an N region, under oxidizing atmosphere. Then, an oxide film formed by the rapid heat treatment under the oxidizing atmosphere is removed, and rapid heat treatment is performed to the wafer under nitriding atmosphere or Ar atmosphere or the mixed atmosphere of them. Thus, the silicon single crystal wafer having a DZ layer on the wafer surface and excellent device characteristics, and at the same time, permitting oxygen precipitate that functions as a gettering site to be sufficiently formed within a bulk region, is manufactured at low cost.