SYSTEM FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY

摘要

A thin film transistor array manufacturing system is provided to reduce a process time by etching an active layer and an ohmic contact layer in a pattern region with an in-situ self dry-etch manner. A load lock chamber(400) supports a substrate transferred from a cassette loading unit. A transfer chamber(402) is installed adjacently to the load lock chamber and includes a transferring space for the substrate transferred from the transfer chamber. One or more capacitively coupled plasma processing apparatus(404) is installed adjacently to the transfer chamber in order to etch a semiconductor layer in an in-situ self dry-etch process while a source electrode, a drain electrode, and a channel part are formed on a substrate including a stacked structure of a gate electrode, a gate insulating layer, the semiconductor layer, and a conductive layer. An inductively coupled plasma processing apparatus(406) strips fully a photoresist used in the in-situ self dry-etch process under an O2 condition.