| 摘要 |
A semiconductor memory device is provided to remove a space between adjacent word lines by sharing gate electrodes between two adjacent memory cells. A plurality of FIN semiconductors are extended in a first direction. Source layers are formed in the Fin semiconductors. Drain layers are formed in the Fin semiconductors. Floating bodies are formed in the Fin semiconductors between the source layers and the drain layers. First gate electrodes are formed in first grooves positioned between the adjacent Fin semiconductors. Second gate electrodes are formed in second grooves adjacent to the first grooves and are positioned between the adjacent Fin semiconductors. Bit lines(BLL0-BLLn-1,BLR0-BLRn-1) are connected to the drain layers and are extended in the first direction. Word lines(WLL0-WLLm-1,WLR0-WLRm-1) are connected to the first gate electrodes and are extended in a second direction orthogonal to the first direction. Source lines(SLL0-SLLm-1,SLR0-SLRm-1) are connected to the source layers, and are extended in the second direction.
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