FORMULATION OF A SILICON GERMANIUM-ON-INSULATOR STRUCTURE BY OXIDATION OF A BURIED POROUS SILICON LAYER,申请号KR20067003316-传众专利搜索

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发明名称	FORMULATION OF A SILICON GERMANIUM-ON-INSULATOR STRUCTURE BY OXIDATION OF A BURIED POROUS SILICON LAYER
摘要
申请公布号	KR100856988(B1)	申请公布日期	2008.09.04
申请号	KR20067003316	申请日期	2006.02.17
申请人		发明人
分类号	H01L27/12;C22F1/10;H01L21/20;H01L21/762	主分类号	H01L27/12
代理机构		代理人
主权项
地址

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