| 摘要 |
<P>PROBLEM TO BE SOLVED: To inexpensively fabricate a high-quality grayscale mask. <P>SOLUTION: This method includes steps of: depositing a layer of Si<SB>3</SB>N<SB>4</SB>on a quartz wafer; depositing a layer of titanium/TEOS on the Si<SB>3</SB>N<SB>4</SB>layer on the backside of the quartz wafer; removing the layer of Si<SB>3</SB>N<SB>4</SB>from the front side of the quartz wafer; depositing a layer of SRO (silicon rich oxide) on the front side of the quartz wafer; patterning a microlens array on the SRO layer; forming a microlens array in the SRO layer; depositing a layer of titanium; patterning and etching the titanium layer; depositing a layer of SiO<SB>x</SB>N<SB>y</SB>on the microlens array; planarizing the layer of SiO<SB>x</SB>N<SB>y</SB>; removing the titanium/TEOS layer from the backside of the quartz wafer; bonding the planarized SiO<SB>x</SB>N<SB>y</SB>layer to a quartz reticle plate; and removing Si<SB>3</SB>N<SB>4</SB>from the bonded structure to form a grayscale mask reticle. <P>COPYRIGHT: (C)2008,JPO&INPIT |
