发明名称 METHOD OF MANUFACTURING PHOTOMASK AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To facilitate connection between patterns of master masks. SOLUTION: The integrated circuit patterns are transferred to pattern transfer regions 12a to 12e of the product mask Md 4 by reduction stepping processing using plural sheets of the IP masks and thereafter the connection between the patterns of the pattern transfer regions 12a to 12e adjacent to each other is performed by the light shielding patterns 2j consisting of organic films formed by exposure processing using energy beams.</p>
申请公布号 JP2002202585(A) 申请公布日期 2002.07.19
申请号 JP20000399210 申请日期 2000.12.27
申请人 HITACHI LTD 发明人 HAYANO KATSUYA;HASEGAWA NORIO
分类号 G03F1/54;G03F1/56;G03F7/20;H01L21/027;H01L27/10 主分类号 G03F1/54
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