METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of forming a sufficiently flat insulating film without performing a reflow process. SOLUTION: The method of manufacturing the semiconductor device has: a step of growing an insulating film 32a in a state where the inside of a deposition chamber is set at a first pressure; a step of adjusting pressure in which the pressure of the inside of the deposition chamber is made to lower gradually to a second pressure lower than the first pressure; and a step of further growing the insulating film 32b in a state where the pressure of the inside of the deposition chamber is set at the second pressure. COPYRIGHT: (C)2008,JPO&INPIT