| 摘要 |
PROBLEM TO BE SOLVED: To provide an easy method and the like for manufacturing an SOI wafer low in cost and having a partial SOI structure. SOLUTION: A method for manufacturing the SOI wafer having the partial SOI structure from a silicon single-crystal wafer includes at least: a step for forming a groove pattern on a surface of the silicon single-crystal wafer; a step for forming a silicone oxide film on the bottom of the formed groove pattern; and a step for performing an RTA treatment of the silicon single-crystal wafer having the groove pattern having the formed-on-the-bottom silicon oxide film in an atmosphere of hydrogen gas, an inert gas, or a mixed gas of them, forming a silicon single-crystal thin film on the formed-on-the-bottom silicon oxide film, and forming the partial SOI structure as an oxide film with the formed-on-the-bottom silicon oxide film embedded. COPYRIGHT: (C)2008,JPO&INPIT
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