| 摘要 |
PROBLEM TO BE SOLVED: To secure finely arranged lithographic margins of contacts and to eliminate mating disagreement with wiring. SOLUTION: A method of manufacturing a nonvolatile semiconductor storage device includes element regions and element isolation regions alternately arranged in stripe at a first pitch in a first direction, contact plugs made of conductive materials connected to the element regions and arranged at the first pitch in the first direction, and wirings connected to the contact plugs. The width of cross section of the contact plug sectioned at a plane perpendicular to the first direction has larger width at the contact bottom width defined as the width at the position connected to the element region than at the contact top width defined as the width at the position connected to the wiring and having larger width of the contact bottom width than the width of the element region. After embedding conductive materials between gates, when contact is formed, a wiring layer is formed with the conductive material of the contact by etching a linear pattern at the same time. COPYRIGHT: (C)2008,JPO&INPIT
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