发明名称 CORRELATED ELECTRON MEMORY
摘要 A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.
申请公布号 WO2008058264(A3) 申请公布日期 2008.09.04
申请号 WO2007US84183 申请日期 2007.11.08
申请人 SYMETRIX CORPORATION;PAZ DE ARAUJO, CARLOS A.;BRUBAKER, MATTHEW D.;CELINSKA, JOLANTA 发明人 PAZ DE ARAUJO, CARLOS A.;BRUBAKER, MATTHEW D.;CELINSKA, JOLANTA
分类号 H01L27/10 主分类号 H01L27/10
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