A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.
申请公布号
WO2008058264(A3)
申请公布日期
2008.09.04
申请号
WO2007US84183
申请日期
2007.11.08
申请人
SYMETRIX CORPORATION;PAZ DE ARAUJO, CARLOS A.;BRUBAKER, MATTHEW D.;CELINSKA, JOLANTA
发明人
PAZ DE ARAUJO, CARLOS A.;BRUBAKER, MATTHEW D.;CELINSKA, JOLANTA