| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent cracks from occurring in a semiconductor substrate on which an integrated circuit is formed. <P>SOLUTION: On the semiconductor substrate 10, the integrated circuit 12 is formed, and an electrode 14 is connected to the integrated circuit 12 electrically. A first resin layer 30 is formed in a first region 20 overlapping with the integrated circuit 12 on the surface of the semiconductor substrate 10, where the electrode 14 is formed. Wiring 40 is connected to the electrode 14 electrically and is formed on the first resin layer 30. In a second region 22 surrounding the first region 20 outside on the surface of the semiconductor substrate 10, a second resin layer 32 is formed apart from the first resin layer 30. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
