| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element capable of ensuring high breakdown voltage properties and achieving a low gate threshold voltage simultaneously, and to provide a method of manufacturing the nitride semiconductor device. SOLUTION: A field effect transistor has a nitride semiconductor laminated structure 1 where an n-type GaN layer 2, a p-type GaN layer 3, and an n-type GaN layer 4 are laminated in order. At the nitride semiconductor laminated structure section 1, a wall surface 7 is formed by etching to form a trapezoidal cross section (mesa shape). At the semiconductor surface of the p-type GaN layer 3 exposed by the formation of the wall surface 7, a region 10 which has conduction characteristics different from those of the p-type GaN layer 3 is formed, and a gate insulating film 8 is formed so that it is in contact with the region 10. A gate electrode 9 is formed so that it opposes the region 10 while the gate insulating film 8 is sandwiched. COPYRIGHT: (C)2008,JPO&INPIT |
