| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device for attaining excellent contact of a copper plug by controlling increase in junction leak of the copper plug formed within a contact hole. SOLUTION: The method for manufacturing the semiconductor device includes the steps of forming an insulating film 38 on a semiconductor substrate 1 having a silicide layer 32, moreover forming a hole 38f to the insulating film 38 on the silicide layer 32, cleaning the inside of the hole 38f and the front surface of the silicide layer 32, forming a titanium layer 41 to the bottom surface and the internal circumferential surface of the hole 38f with the chemical vapor growth method, forming a barrier layer 42 for preventing diffusion of copper on the titanium layer 41 within the hole 38f, and embedding the copper layer 44 within the hole 38f. COPYRIGHT: (C)2008,JPO&INPIT |
