发明名称 SUBSTRATE HEATING APPARATUS AND SEMICONDUCTOR FABRICATION METHOD
摘要 A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.
申请公布号 US2008213988(A1) 申请公布日期 2008.09.04
申请号 US20070951807 申请日期 2007.12.06
申请人 CANON ANELVA CORPORATION 发明人 SHIBAGAKI MASAMI;NUMAJIRI KENJI;EGAMI AKIHIRO;KUMAGAI AKIRA;AKIYAMA SUSUMU
分类号 H01L21/425;F26B19/00 主分类号 H01L21/425
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