| 摘要 |
The invention relates to a method of maintaining the optimal properties of a thin film getter ( 10 ) in a cavity ( 8 ) of a microelectronic device ( 1 ), consisting in coating the getter film ( 10 ) with a protective film ( 12 ) and installing a reaction element ( 14 ). According to the invention, an increase in temperature, while the cavity ( 8 ) may be placed under vacuum, causes the protective film ( 12 ) to react with the reaction element ( 14 ), such that the protective material ( 12 ) moves towards the reaction element ( 14 ) and releases the getter film of getter material ( 10 ).
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