Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the same

摘要

A phase change memory device including a phase change layer includes a storage node and a switching device. The switching device is connected to the storage node. The storage node includes a phase change layer selectively grown on a lower electrode. In a method of manufacturing a phase change memory device, an insulating interlayer is formed on a semiconductor substrate to cover a switching device. A lower electrode connected to the switching device is formed, and a phase change layer is selectively grown on the lower electrode.