发明名称 CMP SLURRY FOR SILICON FILM
摘要 <p>Provided is a CMP slurry for silicon films, and by using such slurry, polishing speeds and polishing speed ratios of a silicon film, a silicon nitride film and a silicon oxide film required for performing CMP are obtained. In the CMP, one type of slurry is used for forming a contact plug by self-alignment to reduce semiconductor element manufacturing cost and improve yield. The slurry contains abrasive grains, a cationic surfactant and water and has a pH value of 6.0-8.0.</p>
申请公布号 WO2008105223(A1) 申请公布日期 2008.09.04
申请号 WO2008JP51876 申请日期 2008.02.05
申请人 HITACHI CHEMICAL CO., LTD.;NARITA, TAKENORI;NISHIYAMA, MASAYA;ASHIZAWA, TORANOSUKE 发明人 NARITA, TAKENORI;NISHIYAMA, MASAYA;ASHIZAWA, TORANOSUKE
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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