发明名称 |
CMP SLURRY FOR SILICON FILM |
摘要 |
<p>Provided is a CMP slurry for silicon films, and by using such slurry, polishing speeds and polishing speed ratios of a silicon film, a silicon nitride film and a silicon oxide film required for performing CMP are obtained. In the CMP, one type of slurry is used for forming a contact plug by self-alignment to reduce semiconductor element manufacturing cost and improve yield. The slurry contains abrasive grains, a cationic surfactant and water and has a pH value of 6.0-8.0.</p> |
申请公布号 |
WO2008105223(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
WO2008JP51876 |
申请日期 |
2008.02.05 |
申请人 |
HITACHI CHEMICAL CO., LTD.;NARITA, TAKENORI;NISHIYAMA, MASAYA;ASHIZAWA, TORANOSUKE |
发明人 |
NARITA, TAKENORI;NISHIYAMA, MASAYA;ASHIZAWA, TORANOSUKE |
分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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