| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is highly integrated and whose speed is increased, and also to provide its manufacturing method. SOLUTION: The semiconductor device has laminated gate structures which are formed by stacking a first insulating film 12, a charge storage layer 13, a second insulating film 14, and a control gate 15 on a semiconductor substrate 11 and is provided with: an oxide film 18 which is formed between adjacently arranged first and second gate electrodes MC and MC and between the first and second gate electrodes and whose top is higher than that of the control gate 15; and a nitride film 21 which is extended on the control gate 15, on the top of the oxide film 18 and on the side walls of the oxide film 18. COPYRIGHT: (C)2008,JPO&INPIT
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