| 摘要 |
PROBLEM TO BE SOLVED: To self form a barrier metal having a sufficient film thickness in a liner film or a porous low-k film. SOLUTION: A lower layer wiring 12 is formed in an interlayer insulating film 10. A liner film 20 and an interlayer insulating film 22 are formed on the interlayer insulating film 10 and the lower layer wiring 12 sequentially. A via 28 and upper layer wiring 30 are formed in the liner film 20 and the interlayer insulating film 22. The lower layer and upper layer wiring 12, 30 and the via 28 have barrier metals 14, 32 and Cu 18, 36. The barrier metals 14, 32 are laminating Ru films 16A, 34A and MnOx 16B, 34B. The MnOx 16B, 34B is a film self formed using oxygen supplied from an RuO<SB>2</SB>film. COPYRIGHT: (C)2008,JPO&INPIT
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