| 摘要 |
PROBLEM TO BE SOLVED: To provide an NOR type flash memory which improves pattern resolution/dimension controllability by lithography is improved and ensures stable operation. SOLUTION: A main source line MSL, for example, is formed parallel to a bit line BL. The main source line MSL has, between adjoining bit lines BL, the same interval as that between the bit lines BL and BL. Between adjoining word lines WL1 and WL2, a first drain via-plug DV1 connected to a drain contact plug is provided immediately under each bit line BL. Meanwhile, a second drain via-plug DV2 connected to a dummy contact plug is provided immediately under the main source line MSL. COPYRIGHT: (C)2008,JPO&INPIT
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