| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film deposition system which is low-cost and compact compared with the conventional one, where there is no need of equipment for moving a cylindrical fixture while revolving the fixture around a vapor deposition raw material as it is autorotated, further, in the case there is a part free from the need of film deposition at a part of a sample, masking or the like are not required at the part, and a thin film in which the uniformity of film thickness is high can be deposited. SOLUTION: Regarding the thin film deposition system 1 where a target 8 (vapor deposition raw material) is made into plasma in a vacuum furnace body 2, and a film is deposited on the surface of each sample 4, a gas feeding apparatus 6 for feeding nitrogen (inert gas) to the surface of each sample 4 is provided. COPYRIGHT: (C)2008,JPO&INPIT
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