Burst access memory with zero wait states

摘要

A memory device has a segmented memory cell array that take a row address and a column address and allows for data words in a column page to be read internally in parallel for faster access. The memory device employs a segmented memory array that routes column address and column address+1 to the segments. This allows for a random starting data word in the column page, while the data words in the next column page (column address+1) are loaded into the memory array segments before the starting data word. When the data page mode or linear burst access crosses a column address boundary the next data words in column address+1 are available and no wait states need to be asserted to allow for new column address values to propagate.