发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor device capable of elevating a yield rate of products to improve the productivity and also ensuring high reliability in production and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a semiconductor substrate 2, a MEMS part 3 formed on a surface of the semiconductor substrate 2 and a cap part arranged at a distance from the MEMS part 3 and also arranged on the surface of the semiconductor substrate 2 so as to cover the MEMS part 3. In the semiconductor device, the cap part is formed by a sidewall area E surrounding the MEMS part 3 and a top board area F having a hollow layer and also forming a closed space together with the semiconductor substrate 2 and the sidewall area E.
申请公布号 US2008211076(A1) 申请公布日期 2008.09.04
申请号 US20080040209 申请日期 2008.02.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NISHIUCHI HIDEO;MIYAGI TAKESHI;TATEYAMA KAZUKI;OBATA SUSUMU;HIGUCHI KAZUHITO
分类号 H01L23/04;H01L21/00 主分类号 H01L23/04
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