Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same

摘要

Provided herein are methods of forming a metal oxide layer that include providing an organometallic compound and an oxidizing agent to the substrate to form the metal oxide layer on the substrate. The organometallic compound may have the general formula of M(NR¹R²)₃R³, wherein M is a metal; R¹ and R² are each independently hydrogen or alkyl; and R³ is selected from the group consisting of alkyl, cycloalkyl, heterocycloalkyl, aryl and heteroaryl.