RAISED STI STRUCTURE AND SUPERDAMASCENE TECHNIQUE FOR NMOSFET PERFORMANCE ENHANCEMENT WITH EMBEDDED SILICON CARBON
摘要
An embedded silicon carbon (Si:C) having a substitutional carbon content in excess of one percent in order to effectively increase electron mobility by application of tension to a channel region of an NFET is achieved by overfilling a gap or trench formed by transistor gate structures with Si: C and polishing an etching the Si: C to or below a surface of a raised gate structure in a super-Damascene process, leaving Si:C only in selected regions above the transistor source and drain, even though processes capable of depositing Si: C with sufficiently high substitutional carbon content are inherently non-selective.
申请公布号
WO2008014228(A3)
申请公布日期
2008.09.04
申请号
WO2007US74169
申请日期
2007.07.24
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHAKRAVARTI, ASHIMA, B.;CHIDAMBARRAO, DURESETI;HOLT, JUDSON, R.;LIU, YAOCHENG;RIM, KERN