Circuit has static random access memory storage element with storage cell and cross coupled inverter based on multi-gate-field effect transistors

摘要

The circuit has a static random access memory (SRAM) storage element with a storage cell and a cross coupled inverter based on multi-gate-field effect transistors. A group of input-components (110,112) are coupled with the storage element to provided a conntactability and another group of input-components (140,142) are coupled with the storage element to provide a another conntactability. Independent claims are also included for the following: (1) a circuit arrangement (2) a method for accessing a multi gate field-effect transistors based on memory cell (3) a method for accessing a multi gate field-effect transistors.