发明名称 |
THIN-FILM TRANSISTOR FABRICATION PROCESS AND DISPLAY DEVICE |
摘要 |
<p>In a process for fabricating a thin-film transistor in which a gate electrode 4 is to be formed on a substrate 1, the process has the steps of forming the gate electrode 4 on the substrate 1, forming a metal oxide layer 7 in such a way as to cover the gate electrode 4, forming a source electrode 6 and a drain electrode 5, and carrying out annealing in an inert gas to change part of the metal oxide layer 7 into a channel region.</p> |
申请公布号 |
WO2008105347(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
WO2008JP53109 |
申请日期 |
2008.02.18 |
申请人 |
CANON KABUSHIKI KAISHA;SANO, MASAFUMI;HAYASHI, RYO |
发明人 |
SANO, MASAFUMI;HAYASHI, RYO |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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