SILICON OXIDE PARTICULATE AGGREGATE, MANUFACTURING METHOD THEREOF, THIN-FILM PHOTOELECTRIC CONVERSION DEVICE CONTAINING PARTICULATE AGGREGATE

摘要

PROBLEM TO BE SOLVED: To manufacture simply and inexpensively by plasma CVD, a silicon oxide particulate aggregate having desired optical scattering characteristics and conductivity, without badly affecting its base layer.

SOLUTION: The silicon oxide particulate aggregate containing silicon oxide as a main component is manufactured by a plasma CVD. In the plasma CVD, the following conditions are met: a pressure/electric power density≥250 (torr cm2/W), a gas flow ratio CO2/SiH4≤14, and a pressure/electric power density≤46×(CO2/SiH4).

COPYRIGHT: (C)2008,JPO&INPIT