| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for selectively and epitaxially growing a substance containing silicon on the surface of a substrate contained in a process chamber. <P>SOLUTION: In one or more embodiments, pressure in the process chamber is decreased when the substance is deposited on the substrate and the pressure is increased when the substance is etched off from the substrate. In the embodiments, process gas flows into the process chamber through a first zone and a second zone so that a desired ratio of a gas flow rate through the first zone to a gas flow rate through the second zone is achieved. In one or more embodiments, the first zone denotes a radially inner zone and the second zone denotes a radially outer zone wherein a ratio of inner zone gas flow rate to an outer zone gas flow rate during the deposition is smaller than that during the etching. In one or more embodiments, the selective epitaxy process includes a step of repeating, until an epitaxial layer grows to a desired thickness, a cycle composed of: the deposition, an etching process after the deposition, and a desired purge cycle. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
