| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive diode which secures high ESD resistance and is easy to manufacture, and its manufacturing method. SOLUTION: The diode 101 is formed by forming an LOCOS oxide film 20 on the semiconductor substrate 11 of a first conductivity type, forming a second conductivity type impurity diffusion region 30 at the surface layer part of the semiconductor substrate 11 under the LOCOS oxide film 20, and forming a PN junction face at the boundary surface of the semiconductor substrate 11 of the first conductivity type and the second conductivity type impurity diffusion region 30. The PN junction face positioned right below the LOCOS oxide film 20 is formed so as to reach the depth≥5μm from the surface of the semiconductor substrate 11. COPYRIGHT: (C)2008,JPO&INPIT
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