SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To make a device capable of withstanding high voltage by making a buffer layer high resistance without increasing threshold voltage. SOLUTION: A field effect transistor 100 includes on a substrate 1 buffer layers 2, 3, a semiconductor working layer 4, a gate insulating film 5Ga, and a gate electrode 5Gb by laminating them sequentially, wherein in the buffer layer 3, the dislocation density within a predetermined plane in parallel to the laminated plane of this buffer layer 3 is made to be a density value at which the volume resistivity of the buffer layer 3 to this dislocation density becomes close to the maximal value, to be more precise, it is made to be 2.0×108cm-2or more, 7.0×1010cm-2or less. COPYRIGHT: (C)2008,JPO&INPIT